top of page

peterwillsher Group

Public·67 members
Easton Scott
Easton Scott

Photodetectors: Devices, Circuits And Applicati...

In the exciting field of optoelectronics, most new frontiers are explored first through the development of photodetectors. This book introduces photodetectors step-by-step, covering every photodetector of practical importance throughout the entire spectral range from UV to far IR -- all with a minimum of mathematics.KEY TOPICS: Leading researcher Donati Silvano begins with classic photoemissive devices, photocathodes and vacuum phototubes; then intoduces the theory and applications of photomultipliers. Silvano presents in-depth coverage of semiconductor photodetectors and related devices, including photodiodes, avalanche devices, phototransistors, photoconductors, and solar cells. Infrared techniques and thermal detectors for non-contact termperature measurements and thermal-image pickup are also covered in detail. The book covers state-of-the-art techniques in coherent detection and photodetection; image-sensing devices such as intensified image tubes and CCDs; and much more. For each device, Silvano presents critical guidance on operation, performance parameters, sensitivity limits, special features -- and in most cases, application circuits with schematic details and design hints.MARKET: For all science and engineering professionals involved with optoelectronics.

Photodetectors: Devices, Circuits and Applicati...

Graphene has been extensively studied for data processing9 and light detection.10 However, this material suffers from high off currents9, as well as limited light absorption and responsivity due to the absence of a band gap.11 The remarkable electrical12 and optoelectronic13,14 properties of 2D transition-metal dichalcogenides (TMDCs), including the presence of a direct band gap in the visible light range,15,16 make them ideal candidates for this purpose. Besides realization of basic logic electrical devices,12 2D semiconductors were demonstrated to be a promising material for light emission17 and detection,18 with potential for the realization of optical to electrical interconnects.19,20 Such interconnects would be expected to operate over meter-scale distances or less, relaxing the wavelength requirements from those set by the optical fiber transmission windows. Large-scale growth by chemical vapor deposition has also been demonstrated,21 which together with simplicity of device fabrication makes MoS2 a good candidate for the fabrication of future optoelectronic devices. While MoS2-based high responsivity photodetectors have already been reported,18 their implementation in photonic circuits is still lacking. Here, we bridge this gap by demonstrating integration of MoS2 photodetectors with Si3N4 photonic circuits, with three different device architectures to achieve either high photoresponse, fast operation speed, or low operation voltages.

In recent times, fused aromatic diketopyrrolopyrrole (DPP)-based functional semiconductors have attracted considerable attention in the developing field of organic electronics. Over the past few years, DPP-based semiconductors have demonstrated remarkable improvements in the performance of both organic field-effect transistor (OFET) and organic photovoltaic (OPV) devices due to the favorable features of the DPP unit, such as excellent planarity and better electron-withdrawing ability. Driven by this success, DPP-based materials are now being exploited in various other electronic devices including complementary circuits, memory devices, chemical sensors, photodetectors, perovskite solar cells, organic light-emitting diodes, and more. Recent developments in the use of DPP-based materials for a wide range of electronic devices are summarized, focusing on OFET, OPV, and newly developed devices with a discussion of device performance in terms of molecular engineering. Useful guidance for the design of future DPP-based materials and the exploration of more advanced applications is provided.

The process flow has been optimized to be suitable for large scale integration (LSI) of SiC bipolar integrated circuits (IC). The improved processing steps are SiC dry etching, ohmic contacts and two-level metal interconnect with chemical-mechanical polishing (CMP). The optimized process flow is applied in the fabrication of discrete devices, a transistor-transistor logic (TTL) process design kit (PDK) and LSI circuits.

Since the discovery of two-dimensional materials back in 2004, an unprecedented research activity has demonstrated that the extreme physical properties from the nano realm can lead to outstanding performance in several technological fields. Here we present an automated transfer system for high-quality nanomaterials that enables their industrial applications in integrated circuits, electronic devices, transparent conductors, anticorrosion coatings and other disruptive technologies. 041b061a72


Welcome to the group! You can connect with other members, ge...


bottom of page